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| APM2023N N-Channel Enhancement Mode MOSFET Features * * * * 20V/12.8A , RDS(ON)=20m(typ.) @ VGS=4.5V RDS(ON)=29m(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged TO-252 Package Pin Description 1 2 3 G D S Applications * Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. Top View of TO-252 D G Ordering and Marking Information APM2023N Handling Code Temp. Range Package Code S N-Channel MOSFET Package Code U : TO-252 Operation Junction Temp. Range C :-55 to 150 C Handling Code TR : Tape & Reel APM2023N U : APM2023N XXXXX XXXXX - Date Code Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter (TA = 25C unless otherwise noted) Rating 20 12 12.8 50 A V Unit Maximum Drain Current - Continuous Maximum Drain Current - Pulsed * Surface Mounted on FR4 Board, t 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 1 www.anpec.com.tw APM2023N Absolute Maximum Ratings (Cont.) Symbol PD TJ TSTG RjA Parameter TA=25C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient TA=100C (TA = 25C unless otherwise noted) Rating 50 W 10 150 -55 to 150 50 C C C/W Unit Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa b (TA = 25C unless otherwise noted) APM2023N Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V , IDS=250A VDS=16V , VGS=0V VDS=VGS , IDS=250A VGS=12V , VDS=0V VGS=4.5V , IDS=12.8A VGS=2.5V , IDS=6.6A ISD=1.7A , VGS=0V VDS=10V , IDS= 6A VGS=4.5V , 18 1 0.5 0.7 20 29 0.8 15 5.4 3 25 47 42 120 65 1 100 23 35 1.1 18 V A V nA m V Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance nC VDD=10V , IDS=1A , VGEN =4.5V , RG=0.2 VGS=0V 21 65 35 780 165 105 ns Output Capacitance VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz pF Notes a b : Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 2 www.anpec.com.tw APM2023N Typical Characteristics Output Characteristics 50 45 30 25 Transfer Characteristics ID-Drain Current (A) 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 8 9 10 VGS=2V ID-Drain Current (A) 40 VGS=3,4,5,6,7,8,9,10V 20 15 TJ=125C 10 TJ=25C 5 0 0.0 TJ=-55C 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.50 IDS=250uA On-Resistance vs. Drain Current 0.050 VGS(th)-Threshold Voltage (V) (Normalized) 1.25 1.00 0.75 0.50 0.25 0.00 -50 RDS(ON)-On-Resistance () 0.045 0.040 0.035 0.030 0.025 0.020 0.015 VGS=4.5V VGS=2.5V -25 0 25 50 75 100 125 150 0.010 0 5 10 15 20 25 30 Tj - Junction Temperature (C) ID - Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 3 www.anpec.com.tw APM2023N Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.10 ID=6.6A On-Resistance vs. Junction Temperature 2.00 VGS=4.5V RDS(ON)-On-Resistance () 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 1 2 3 4 5 6 7 8 9 10 RDS(ON)-On-Resistance () (Normalized) 0.09 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 -50 ID=12.8A -25 0 25 50 75 100 125 150 VGS - Gate-to-Source Voltage (V) TJ - Junction Temperature (C) Gate Charge 10 1200 VDS=10V ID=6A Capacitance Frequency=1MHz VGS-Gate-Source Voltage (V) 8 1000 Capacitance (pF) 800 600 400 200 Ciss 6 4 2 Coss Crss 0 0 5 10 15 20 25 0 0 4 8 12 16 20 QG - Gate Charge (nC) VDS - Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 4 www.anpec.com.tw APM2023N Typical Characteristics Source-Drain Diode Forward Voltage 30 Single Pulse Power 80 10 IS-Source Current (A) 60 TJ=150C TJ=25C Power (W) 40 1 20 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 0.01 0.1 1 10 30 VSD -Source-to-Drain Voltage (V) Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA SINGLE PULSE D=0.02 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 5 www.anpec.com.tw APM2023N Packaging Information TO-252 (Reference JEDEC Registration TO-252) E b2 L2 A C1 D H L1 L b e1 C A1 Dim A A1 b b2 C C1 D E e1 H L L1 L2 Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32 6 Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80 www.anpec.com.tw Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10 Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 APM2023N Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C www.anpec.com.tw Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 7 APM2023N Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions E Po P P1 D t F W Bo Ao D1 T2 Ko J C A B T1 Application A 330 3 B 100 2 D 1.5 +0.1 C 13 0. 5 D1 1.5 0.25 J 2 0.5 Po 4.0 0.1 T1 16.4 + 0.3 -0.2 P1 2.0 0.1 T2 2.5 0.5 Ao 6.8 0.1 W 16+ 0.3 - 0.1 Bo 10.4 0.1 P 8 0.1 Ko 2.5 0.1 E 1.75 0.1 t 0.30.05 TO-252 F 7.5 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 8 www.anpec.com.tw APM2023N Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Dec., 2002 9 www.anpec.com.tw |
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